6992 Mosfet

Posted : admin | On 30-04-2021



  1. AON6414A Datasheet (PDF) 0.1. Aon6414a.pdf Size:268K aosemi. AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V).
  2. Product Technical Specifications Make an effective common gate amplifier using this AON6992 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is Yes mW.
  1. 6992 Mosfet Motor
  2. 6992 Mosfet Drive
  3. 6992 Mosfet Circuit


Alpha & Omega Semiconductors
AON6992 Datasheet Preview

30V Dual Asymmetric N-Channel MOSFET

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30V Dual Asymmetric N-Channel MOSFET
• Trench Power αMOS Technology
• Low Gate Charge
• RoHS and Halogen-Free Compliant
VDS
RDS(ON) (at VGS=10V)
Q1
50A
< 8.6mΩ
30V
< 2mΩ
Applications
• Isolated DC/DC Converters in Telecom and Industrial
100% Rg Tested
DFN5X6D
G2
S2
(S1/D2)
D1
D1 D1
Top View
S1/D2
Soft Recovery MOSFET:
Orderable Part Number
Package Type
Form
Bottom View
Minimum Order Quantity
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDS
VGS
Current G
Pulsed Drain Current C
IDM
Current
TA=25°C
Avalanche energy L=0.01mH
IDSM
EAS
10µs
TC=25°C
PD
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Max Q1
±20
31
19
38
36
8
2
Max Q2
±12
67
31
80
36
18
2
V
A
A
V
W
Thermal Characteristics
Maximum Junction-to-Ambient A
Maximum Junction-to-Case
Steady-State
Symbol
RθJC
30
4.6
30
2.2
40
6
40
2.8
°C/W
°C/W
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6992 Mosfet Motor

Datasheet

6992 Mosfet Drive

6992 Mosfet

Iii ABSTRACT This report is a summary of advances in eight instrumentation and controls (I&C) technology focus areas that have applications in nuclear power plant digital upgrades as well as in new plants. Infineon Technologies IRFS4615PBF. IRFS4615 - 12V-300V N-Channel Power MOSFET. In Stock View Datasheet Add to BOM Create Stock and Price Alerts.


Mosfet


Alpha & Omega Semiconductors
AON6992 Datasheet Preview

30V Dual Asymmetric N-Channel MOSFET

No Preview Available !

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Conditions
BVDSS
IGSS
RDS(ON)
VSD
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
Gate-Body leakage current
Static Drain-Source On-Resistance
VDS=VGS, ID=250µA
Forward Transconductance
VGS=4.5V, ID=20A
IS=1A,VGS=0V
TJ=55°C
DYNAMIC PARAMETERS
Coss Output Capacitance
Rg Gate resistance
f=1MHz
Qg(10V)
Qgs
tD(on)
tD(off)
trr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75Ω,
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
30
0.6
1.8
6.3
67
820
40
13
2
6.5
17
11
Max Units
5
2.2
7.6
1
V
nA
mΩ
S
A
pF
1.8 Ω
nC
nC
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Rev.1.0: October 2014
Page 2 of 10

6992 Mosfet Circuit